기술 소개

Equipment

• Optical system: highly reflective mirrors and DMD™ (down to 1 μm feature size)
• Stage System
  • Substrate size: 5×5 mm² ~ 8-inch wafer
  • Maximum write area: 200 × 200 mm²
  • Interferometer resolution: 20 nm
• Diode Laser Illumination Module: 405 nm / 8 W
• Autofocus System: Real-time air-gauge autofocus (dynamic range: 80 μm)

Applications

• Backside alignment
• Global & field-by-field alignment
• Fast, high-precision alignment
• Alignment accuracy < 500 nmProcess Result

Process Result

Equipment

• Acceleration voltage: ~100 keV
• Wafer size: piece to 200 mm
• Field size: 600 μm × 600 μm (Max)
• Minimum line width: 10 nm
• Alignment accuracy: 25 nm
• Beam current: 1×10⁻¹² ~ 2×10⁻⁹ A
• Beam shape: Gaussian
• Data formats: *.sch, *.con, *.ccc, *.cbc, *.cel

Applications

• Applicable to a wide range of nanostructured devices, including electronic devices, optoelectronic devices, quantum
  structures, metamaterials, semiconductor–superconductorinterface studies, MEMS, optical and photonic devices.
• Also suitable for mask fabrication and direct writing on non-planar substrates

Process Result

Equipment

• Wafer size: up to 8-inch wafer
• Base pressure: ≤ 10 mTorr (PM 기준)
• Process temperature range: up to 650 ℃
• RF plasma power: 1,000 W (13.56 MHz)
• Precursors: TMA, TEMAHf, TEMATi
• Process gases: O₂, NH₃, Ar, N₂

ALD Process Performance

• Deposition: Al₂O₃, HfO₂ (PM1), TiN (PM2)
• Thickness uniformity: < 1.5% (1 sigma)
• Step coverage: > 95%

Applications

• High-k gate oxides for SiC·GaN power MOSFET integration, increasingly adopted in recent studies

Process Result

Equipment

• Wafer size: up to 8-inch wafer
• Base pressure: < 5 × 10⁻⁹ Torr
• Process temperature: 300–750 ℃
• RF plasma power: 600 W (13.56 MHz)
• Process gases: Si₂H₆, GeH₄, CH₃SiH₃, 0.5% B₂H₆/He, 0.5% PH₃/He

SiGe Process Performance

• Selective SiGe epitaxy on Si substrate
• Uniform Ge concentration
• Thickness uniformity: < 3.0% (1 sigma)
• Growth rate & Ge-content control via GeH₄ flow

Applications

• IBM demonstrated the world’s fastest SiGe-based semiconductor circuit, operating at over 110 GHz and capable of
  processing electrical signals in just 4.3 trillionths of a second.

Process Result

Equipment

• Photo: I-Line Stepper(i10C), PR Track(Mark-7), Aligner(MA6)
• Cleaning & Etching: Wet station, Dry Etcher_20 nm, ICP-RIE
• Thin Film & Diffusion: Furnace, Implanter, LP-CVD, ALD
• RF plasma power: 600 W (13.56 MHz)
• Inspection: CD-SEM, FE-SEM, OP3260, 4PP, 3D Profiler, Stress Measurement

Applications

• 초고전압 분야에서 신뢰성·제어성·효율성 향상
• 시스템 소형화 및 에너지 절감
• 열방열 분야의 소형화 및 비용 절감
• 자동차 및 산업용 전력변환 시스템(Converter, Inverter 등)

Fabrication Result

Equipment

• Photo: Stepper ≥ 0.4 μm (5:1 Reticle Lithography)
• Cleaning & Etching: Wet station, ICP Dry Etcher
• Inspection: CD-SEM, FE-SEM, 3D Profiler

Applications

• LED Sapphire 기판 렌즈 패턴 형성
• 난반사 제어 기반 광출력 향상
• Dot patterning 및 Sapphire·PR 선택적 식각 기반 depth control
• 자동차 및 산업용 전력변환 시스템(Converter, Inverter 등)

Fabrication Result

Equipment

• Photo: Aligner(MA6), Laser Lithography
• Cleaning & Etching: Wet station, Dry Etcher_20 nm, ICP-RIE, DRIE
• Thin Film & Diffusion: E-Beam Evaporator, LP-CVD, PE-CVD
• Inspection: CD-SEM, FE-SEM, 3D Profiler

Applications

• 압전 트랜스듀서, 캔틸레버·멤브레인 센서
• SPM Probe, 마이크로폰
• 수중음향 센서, 바이오 센서

Fabrication Result

Equipment

• Photo: Stepper ≥ 0.4 μm (5:1 Reticle Lithography)
• Cleaning & Etching: Wet station, Dry Etcher_20 nm, ICP-RIE, DRIE
• Thin Film & Diffusion: E-Beam Evaporator, PE-CVD, Furnace
• Inspection: CD-SEM, FE-SEM, 3D Profiler

Applications

• Electronic detection of DNA
• Protein detection
• Electrical detection of Viruses

Fabrication Result