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Equipment 공정기술 포토공정 
| No | Items | Description | ||
| 1 | Standard Process | Si Deep Etch : SF6/C4F8 Gas Base (about 0.5um/cycle) | ||
| Si Deep Etch 2 : SF6/C4F8 Gas Base (about 0.3um/cycle) | ||||
| Surface Treatment : Black Silicon, Hydrophobic treatment | ||||
| 2 | Plasma Source | ICP Plasma | ||
| 3 | Pressure Control | 5 mTorr ~ 100 mTor | ||
| 4 | Power | Source Power : 1000W(13.56MHz), Bias Power : switchable ENI 30~300W(13.56MHz) | ||
| 5 | Number of Gas | SF6, C4F8, Ar, O2 | ||
| 6 | Chuck Type | Machanical Chuck | ||
| 7 | Process Temperature | Cathode 20℃ | ||
| 8 | Wafer size | 4inch | ||
| 9 | Control | Fully Automated Control Function | ||
| Single Wafer loadlock System | ||||
【 직접사용 라이선스 대상자 목록 (유효기간 만료 및 자격정지자 제외) 】
