| No |
Items |
Description |
| 1 |
Standard Process |
Oxide Etch : CF4/CHF3 Gas Base (about 70Å/sec) |
| Nitride Etch : CHF3 Gase Base (about 30Å/sec) |
| Poly Etch : Cl2/HBr Gas Base (about 40Å/sec) |
| GaN Etch : Cl2/HBr Gas Base (about 30Å/sec) |
| 2 |
Plasma Source |
ICP Plasma (Plasma Density : >5X10_12/cm3) |
| 3 |
Pressure Control |
5 mTorr ~ 100 mTor |
| 4 |
Power |
Source Power : 2000W(13.56MHz), Bias Power : 600W(13.56MHz) |
| Source Power : 3000W(13.56MHz), Bias-1/2 Power : 2000W(13.56MHz) |
| 5 |
Number of Gas |
PM#2 (Poly Si) |
CF4, Cl2, HBr, BCl3, Ar, O2 |
| PM#4 (Oxide) |
CF4, CHF3, SF6, Ar, O2 |
| 6 |
Chuck Type |
Elactrostatic Chuck |
| 7 |
Process Temperature |
Cathode 60℃(PM#2) / 20℃ (PM#4) |
| 8 |
Wafer size |
8inch (Flat Type) |
| 9 |
Control |
Fully Automated Control Function |
| Semi-Auto Function for Wafer Transfer and Manual Process |
Equipment 
