| No |
Items |
Description |
| 1 |
Standard Process |
Oxide Etch : CF4 Gas Base (about 10Å/sec) |
| Nitride Etch : SF6 Gase Base (about 10Å/sec) |
| Metal Etch : Cl2/BCl3 Gas Base (Al - about 70Å/sec) |
| O2 Plasma Treatment |
| 2 |
Plasma Source |
ICP Plasma (Plasma Density : >5X1012/cm3) |
| 3 |
Pressure Control |
5 mTorr ~ 100 mTor |
| 4 |
Power |
Source Power : 2000W(13.56MHz), Bias Power : 1000W(13.56MHz) |
| 5 |
Number of Gas |
CF4, SF6, Cl2, BCl3, Ar, O2 |
| 6 |
Chuck Type |
Machanical Chuck |
| 7 |
Process Temperature |
Cathode 15℃ |
| 8 |
Wafer size |
6inch / 8inch (6 inch setting) |
| 9 |
Control |
Fully Automated Control Function |
| Semi-Auto Function for Wafer Transfer and Manual Process |
Equipment 
