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Equipment 공정기술 포토공정 
| No | Items | Description |
| 1 | Standard Process | Si Deep Etch : SF6/C4F8 Gas Base (about 2um/cycle) |
| Surface Treatment : Black Silicon, Hydrophobic treatment | ||
| 2 | Plasma Source | ICP Plasma |
| 3 | Pressure Control | 5 mTorr ~ 100 mTor |
| 4 | Power | Source Power : 2000W(13.56MHz), Bias Power : switchable ENI 100W(13.56MHz) |
| 5 | Number of Gas | SF6, C4F8, Ar, O2 |
| 6 | Chuck Type | Elactrostatic Chuck |
| 7 | Process Temperature | Cathode 20℃ |
| 8 | Wafer size | 6inch, 8inch |
| 9 | Control | Fully Automated Control Function |
| 6inch loadlock System |
